Why is chlorine generally added in the thermal oxidation process?
Release time:
2025-01-06
What is the thermal oxidation process?
The thermal oxidation process is used in semiconductor manufacturing to generate a silicon dioxide (SiO₂) layer on the wafer surface. It is divided into wet oxidation and dry oxidation, mainly used in chip processes to create insulation layers such as gate oxide layers, field oxide layers, STI isolation layers, or protective passivation layers.
What is DCE?
DCE refers to trans-1,2-dichloroethylene, a chlorinated organic compound with the chemical formula C2H4Cl2, which is the substance that provides chlorine in the thermal oxidation chlorination process.
In addition to DCE, early substances such as chlorine gas, trichloroethylene (TCE), 1,1,1-trichloroethane (TCA), and HCl could also be used as chlorination substances. However, TCE is a carcinogen and is no longer used, and TCA can damage the ozone layer, so HCl and DCE are more commonly used as chlorination substances.
What is the role of chlorine in the thermal oxidation process?
1. Enhance oxidation speed, which can increase the oxidation rate by 10% to 15%.
2. Passivate mobile ions, especially Na+ and K+. Sodium and potassium ions move to the silicon wafer surface under the influence of an electric field, affecting electrical properties and leading to device instability. Chlorination can fix mobile ions and prevent their movement.
3. Neutralize charges at the Si-SiO2 interface, reducing defects in the oxide layer.
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